A 3.22–5.45 GHz and 199 dBc/Hz FoMT CMOS Complementary Class-C DCO

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Millimetre-wave 65nm CMOS Class C Oscillator at 65 GHz

A 65-GHz Class-C LC oscillator designed in 65nm CMOS technology by ST Microelectronics is presented. A three spiral transformer has been used to achieve low phase noise and low power consumption. Post-layout simulations show a phase noise is equal to -88.4 dBc/Hz at 1-MHz offset from the carrier (65.8 GHz). The power consumption is 14 mW with 1.2-V supply voltage. The oscillator is capable to o...

متن کامل

5 GHz pipelined multiplier and MAC in 0.18µm complementary static CMOS

Wave pipelining improves the throughput of a circuit by exploiting the delays of combinational elements, rather than register clocks, for synchronization. Our proposed approach, called HyPipe, combines conventional register-based pipelining with wave pipelining and aims to take advantage of both pipelining methods [5]. In this paper, we applied HyPipe to develop 4-bit signed multipliers and 4-b...

متن کامل

A 5-GHz Direct-Conversion CMOS Transceiver

A CMOS transceiver fully compliant with IEEE 802.11a in the unlicensed national information infrastructure (UNII) band (5.15–5.35 GHz) achieves a receiver sensitivity of 5 dBm for 64-QAM (quadrature amplitude modulation) with an error vector magnitude (EVM) of 29.3 dB. A single-sideband mixing technique for local-oscillator signal generation avoids frequency pulling. Realized in 0.18m CMOS and ...

متن کامل

A 1.8 GHz CMOS Low-Noise Amplifier

A 1.8 GHz low-noise amplifier has been designed and fabricated in a standard 0.35 pm CMOS process. Measurement results indicate that the amplifier has a forward gain (S21) of 10.5 dB and a noise figure of 3.94 dB, while consuming 40 mW from a 2.5 V supply.

متن کامل

A 23.8-GHz SOI CMOS Tuned Amplifier

A 23.8-GHz tuned amplifier is demonstrated in a partially scaled 0.1m silicon-on-insulator CMOS technology. The fully integrated three-stage amplifier employs a common-gate, source–follower, and cascode with on-chip spiral inductors and MOS capacitors. The gain is 7.3 dB, while input and output reflection coefficients are 45 and 9.4 dB, respectively. Positive gain is exhibited beyond 26 GHz. Th...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Wireless Communications and Mobile Computing

سال: 2018

ISSN: 1530-8669,1530-8677

DOI: 10.1155/2018/4968391